Infineon MOSFET

IPP60R099P6

Infineon MOSFET CoolMOS P6 In Stock

600 V CoolMOS P6 super-junction MOSFET with 99 mOhm Rds(on) for efficient PFC, flyback and LLC stages.

600 V CoolMOS P6 super-junction MOSFET with 99 mΩ typical Rds(on) and low gate charge for efficient PFC, flyback and LLC switching power supply stages.

FAE Professional Review

For mains-fed supplies in the 300-600 W range, the IPP60R099P6 hits the sweet spot between Rds(on) and gate charge. The CoolMOS P6 body diode is fast enough for many LLC transitions, though hard-switched topologies still need care with dv/dt. Keep the gate loop short and use a 10-22 Ω gate resistor to manage EMI.
ParameterValue
Vds600 V
Id25.5 A
Rds(on)99 mΩ
PackageTO-220-3
Temperature-55 °C to +150 °C

Application Circuits

Application

PFC boost stages

Reference circuits and application schematics for PFC boost stages are available from our FAE team.

Application

Flyback and LLC converters

Reference circuits and application schematics for Flyback and LLC converters are available from our FAE team.

Application

Solar micro-inverters

Reference circuits and application schematics for Solar micro-inverters are available from our FAE team.

Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.

Related Documents

  • Manufacturer Datasheet - IPP60R099P6 Download
  • Import Declaration - IPP60R099P6 Download
  • Certificate of Origin Download
  • RoHS Compliance Download

Alternative Part Numbers

ModelPackageNoteAction
IPP075N15N3G TO-220-3 150 V alternative for low-voltage 48 V stages View

Complementary Part Numbers

ModelPackageNoteAction
XMC4800-F100F1024AA LQFP-100 Digital control and PFC loop MCU View
TLE4972-AE35S5 PG-TDSO-16 Output current sensing View

Frequently Asked Questions

What is the IPP60R099P6 best used for?

It is a 600 V CoolMOS P6 super-junction MOSFET with 99 mΩ typical Rds(on), suited to mains-connected PFC, flyback and LLC stages in the 300-600 W range. Low gate charge keeps switching loss in check.

For low-voltage rails, an OptiMOS 150 V device is more efficient.

Request this MOSFET for your power supply

Can I use it in a hard-switched topology?

Yes, but hard-switched designs need care with dv/dt and the body-diode recovery. The CoolMOS P6 body diode is fast enough for many LLC transitions, while hard-switched stages should verify ringing and EMI.

Our troubleshooting guide covers snubber and gate tuning.

Read the MOSFET gate-drive troubleshooting guide

What gate resistor should I start with?

Begin with the datasheet range and keep the gate loop short. A 10-22 Ω resistor is a common starting point for managing EMI without excessive switching loss, then tune on the bench.

Our FAE team can review your gate-drive values.

Ask us about gate-drive design

How does it compare with the IPP075N15N3G?

The IPP60R099P6 is a 600 V CoolMOS device for mains-fed stages, while the IPP075N15N3G is a 150 V OptiMOS device for low-voltage, high-current work. Voltage class decides which fits.

Compare both on this page before deciding.

Compare with the IPP075N15N3G

What layout and thermal points matter most?

Minimize the hot loop around the switch, keep the sense and gate returns clean, and provide adequate copper or a heatsink for the 99 mΩ device. Verify case temperature at full load.

Request a layout and thermal review.

Request a layout and thermal review

Is the part genuine and in stock?

The IPP60R099P6 is normally available from regional stock with import, origin and RoHS documents included. The datasheet downloads from this page.

Request a quote for current stock and lead time.

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