Infineon MOSFET

IPP075N15N3G

Infineon MOSFET OptiMOS 3 On Request

150 V / 100 A OptiMOS 3 MOSFET with 7.5 mOhm Rds(on) for 48 V distribution and synchronous rectification.

150 V / 100 A OptiMOS 3 power MOSFET with 7.5 mΩ typical Rds(on), designed for synchronous rectification, 48 V distribution and battery management applications.

FAE Professional Review

The IPP075N15N3G is the part we spec for 48 V rails and mid-current synchronous rectification. At 7.5 mΩ typical, conduction losses stay low at 20-30 A continuous, and the TO-220 package keeps thermal management simple. For higher-current boards, consider the DPAK and D2PAK siblings of the same die to reduce mounting resistance.
ParameterValue
Vds150 V
Id100 A
Rds(on)7.5 mΩ
PackageTO-220-3
Temperature-55 °C to +175 °C

Application Circuits

Application

48 V power distribution

Reference circuits and application schematics for 48 V power distribution are available from our FAE team.

Application

Synchronous rectification

Reference circuits and application schematics for Synchronous rectification are available from our FAE team.

Application

Battery management systems

Reference circuits and application schematics for Battery management systems are available from our FAE team.

Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.

Related Documents

  • Manufacturer Datasheet - IPP075N15N3G Download
  • Import Declaration - IPP075N15N3G Download
  • Certificate of Origin Download
  • RoHS Compliance Download

Alternative Part Numbers

ModelPackageNoteAction
IPP60R099P6 TO-220-3 600 V alternative for mains-fed power stages View

Complementary Part Numbers

ModelPackageNoteAction
XMC4800-F100F1024AA LQFP-100 Gate drive and control MCU View
TLE4972-AE35S5 PG-TDSO-16 Load current sensing View

Frequently Asked Questions

What is the IPP075N15N3G best used for?

It is a 150 V / 100 A OptiMOS 3 MOSFET with 7.5 mΩ typical Rds(on), aimed at 48 V power distribution, synchronous rectification and battery-management systems. Low Rds(on) keeps conduction loss small at 20-30 A continuous.

For higher-current boards, consider the DPAK and D2PAK siblings of the same die.

Request this MOSFET for your design

How much current can I push through it in practice?

The 100 A rating assumes an ideal case temperature; your real limit depends on heatsinking, PCB copper and airflow. Derate for the actual thermal path and keep junction temperature within limits.

We can help you calculate a realistic continuous current for your board.

Request a current derating check

How do I drive the gate efficiently?

Its low gate charge suits fast switching, but gate-loop inductance and resistor choice still set dv/dt and ringing. Keep the driver close and use a resistor tuned to your EMI target.

Our MOSFET troubleshooting guide covers common gate-drive problems.

Read the MOSFET gate-drive troubleshooting guide

How does it compare with the IPP60R099P6?

The IPP075N15N3G is a 150 V OptiMOS device for low-voltage, high-current stages, while the IPP60R099P6 is a 600 V CoolMOS device for mains-connected PFC and LLC stages. They serve different voltage domains.

Pick the voltage class your rail needs.

Compare with the IPP60R099P6

What layout practices keep efficiency high?

Use wide copper for the drain and source paths, minimize the hot loop between input capacitance and the device, and provide a solid ground return. Good layout often matters more than a marginal Rds(on) difference.

Request a layout review from our FAE team.

Request a layout review

Is the part genuine and in stock?

BeiLuo supplies factory-traceable IPP075N15N3G parts with import, origin and RoHS documents on every order. Availability is confirmed per request and the datasheet downloads here.

Request a quote for current stock and lead time.

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